| PART |
Description |
Maker |
| STK8250 SANYOELECTRICCO.LTD.-STK8250 |
50W MIN AF POWER AMP
|
SANYO[Sanyo Semicon Device]
|
| NTE7032 |
Integrated Circuit Module − AF Power Amp, Single Channel, 120W Min
|
NTE Electronics
|
| STK0100II |
Thick Film Hybrid Integrated Circuit 100W MIN AF POWER AMP, OUTPUT STAGE (DPP)
|
Sanyo Semicon Device
|
| VN340SPTR-E VN340SP-E -VN340SP-E |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 6.06 to 6.33; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 6.26 to 6.53; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 四高端智能电源固态继电器
Quad high side smart Power solid state relay
|
EPCOS AG
STMicroelectronics
|
| HDB105G HDB107G HDB101G HDB104G HDB106G HDB102G HD |
1.0A, 1000V ultra fast recovery rectifier
1.0A, 50V ultra fast recovery rectifier
1.0A, 800V ultra fast recovery rectifier
1.0A, 200V ultra fast recovery rectifier
1.0A, 400V ultra fast recovery rectifier
1.0A, 100V ultra fast recovery rectifier
Single Supply RS232C Line Driver/Receiver(?????μ?o?RS232C ?o?????????¨???2???2??????)
IC-1W BTL MONO AUDIO AMP
Analog IC
Audio Power Amplifier IC; Speaker Channels:Stereo; Output Power, Po:22W; Load Impedance Min:4ohm; Supply Voltage Max:18V; Supply Voltage Min:9V; Package/Case:17-SIP; Amplifier Type:; Number of Amplifiers:2; Output Current:0.375A
1.0 AMP. Glass Passivated Bridge High Efficient Rectifier 50 to 1000 Volts 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
1.0 AMP. Glass Passivated Bridge High Efficient Rectifier 50 to 1000 Volts 1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
|
MCC[Micro Commercial Components]
Micro Commercial Components Corp.
Micro Commercial Components, Corp.
|
| 5050871-1 |
Discrete Sockets; SOCKET,MIN-SPR W/H SN-AU SER-5 ( AMP )
|
Tyco Electronics
|
| CMH01 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 10.4 to 10.8; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 开关电源的应用
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 10.4 to 10.8; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Switching Mode Power Supply Applications
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| 50084-1 |
Multiple Coaxial Contacts ( COAXICON ); MIN PRINTED CIRCUIT CONN ( AMP )
|
Tyco Electronics
|
| ISL9214A ISL9214AIRZ ISL9214AIRZ-T |
Li-ion/Li-Polymer Battery Charger Accepting Two Power Sources; Temperature Range: -40°C to 85°C; Package: 10-DFN T&R 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO10
|
Intersil Corporation
Intersil, Corp.
|
| 15KPJ45 15KPJ45A 15KPJ45C 15KPJ45CA 15KPJ58 15KPJ5 |
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 376 V @ Ipp = 40 A.
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/243.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 308 V @ Ipp = 49 A.
Glass passivated junction transient voltage suppressor. Vrwm = 220 V. Vbr(min/max) = 242/310.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 394 V @ Ipp = 38 A.
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/154.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 196 V @ Ipp = 77 A.
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/205.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 259 V @ Ipp = 58 A.
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/226.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 287 V @ Ipp = 52 A.
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/182.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 231 V @ Ipp = 65 A.
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/169.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 214 V @ Ipp = 70 A.
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压20伏特175000脉冲峰值功率）
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压20伏特75000脉冲峰值功率）
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压220伏特75000脉冲峰值功率）
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/153.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 193 V @ Ipp = 78 A.
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/165.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 209 V @ Ipp = 72 A.
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/217.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 275 V @ Ipp = 55 A.
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/140.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 177 V @ Ipp = 85 A.
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/239.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 304 V @ Ipp = 49 A.
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/267.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A.
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A.
|
Pan Jit International I...
PANJIT[Pan Jit International Inc.]
PanJit International Inc.
PanJit International, Inc.
|
| BCP51115 |
45 V, 1 A PNP medium power transistors - Complement: BCP54 ; fT min: 115 MHz; hFE max: 250 ; hFE min: 40 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1300 mW; VCEO max: 45 V; Package: SOT223 (SC-73); Container: Tape reel smd
|
NXP SEMICONDUCTORS
|
